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GASB SCHOTTKY DIODES FOR INFRARED DETECTORS
被引:34
作者
:
NAGAO, Y
论文数:
0
引用数:
0
h-index:
0
NAGAO, Y
HARIU, T
论文数:
0
引用数:
0
h-index:
0
HARIU, T
SHIBATA, Y
论文数:
0
引用数:
0
h-index:
0
SHIBATA, Y
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1981年
/ 28卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1981.20355
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:407 / 411
页数:5
相关论文
共 18 条
[1]
ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE
BECKER, WM
论文数:
0
引用数:
0
h-index:
0
BECKER, WM
FAN, HY
论文数:
0
引用数:
0
h-index:
0
FAN, HY
RAMDAS, AK
论文数:
0
引用数:
0
h-index:
0
RAMDAS, AK
[J].
JOURNAL OF APPLIED PHYSICS,
1961,
32
: 2094
-
&
[2]
VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
CAPASSO, F
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
SUMSKI, S
论文数:
0
引用数:
0
h-index:
0
SUMSKI, S
FOY, PW
论文数:
0
引用数:
0
h-index:
0
FOY, PW
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(02)
: 165
-
167
[3]
INFRARED OPTOELECTRONIC PROPERTIES OF METAL-GERMANIUM SCHOTTKY BARRIERS
CHAN, EY
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
CHAN, EY
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
CARD, HC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(01)
: 78
-
83
[4]
SCHOTTKY-BARRIER HEIGHT OF AU ON N-TYPE GA1-XALXSB (0.0 LESS-THAN-OR-EQUAL-TO 0.65)
CHIN, R
论文数:
0
引用数:
0
h-index:
0
CHIN, R
MILANO, RA
论文数:
0
引用数:
0
h-index:
0
MILANO, RA
LAW, HD
论文数:
0
引用数:
0
h-index:
0
LAW, HD
[J].
ELECTRONICS LETTERS,
1980,
16
(16)
: 626
-
627
[5]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[6]
RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(04)
: 395
-
&
[7]
EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES
FORREST, SR
论文数:
0
引用数:
0
h-index:
0
FORREST, SR
DIDOMENICO, M
论文数:
0
引用数:
0
h-index:
0
DIDOMENICO, M
SMITH, RG
论文数:
0
引用数:
0
h-index:
0
SMITH, RG
STOCKER, HJ
论文数:
0
引用数:
0
h-index:
0
STOCKER, HJ
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 580
-
582
[8]
IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING
FORREST, SR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
FORREST, SR
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
POLLACK, MA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(03)
: 322
-
325
[9]
SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
论文数:
0
引用数:
0
h-index:
0
KAJIYAMA, K
MIZUSHIMA, Y
论文数:
0
引用数:
0
h-index:
0
MIZUSHIMA, Y
SAKATA, S
论文数:
0
引用数:
0
h-index:
0
SAKATA, S
[J].
APPLIED PHYSICS LETTERS,
1973,
23
(08)
: 458
-
459
[10]
III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES
LAW, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center
LAW, HD
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center
NAKANO, K
TOMASETTA, LR
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center
TOMASETTA, LR
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(07)
: 549
-
558
←
1
2
→
共 18 条
[1]
ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE
BECKER, WM
论文数:
0
引用数:
0
h-index:
0
BECKER, WM
FAN, HY
论文数:
0
引用数:
0
h-index:
0
FAN, HY
RAMDAS, AK
论文数:
0
引用数:
0
h-index:
0
RAMDAS, AK
[J].
JOURNAL OF APPLIED PHYSICS,
1961,
32
: 2094
-
&
[2]
VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
CAPASSO, F
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
SUMSKI, S
论文数:
0
引用数:
0
h-index:
0
SUMSKI, S
FOY, PW
论文数:
0
引用数:
0
h-index:
0
FOY, PW
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(02)
: 165
-
167
[3]
INFRARED OPTOELECTRONIC PROPERTIES OF METAL-GERMANIUM SCHOTTKY BARRIERS
CHAN, EY
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
CHAN, EY
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
CARD, HC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(01)
: 78
-
83
[4]
SCHOTTKY-BARRIER HEIGHT OF AU ON N-TYPE GA1-XALXSB (0.0 LESS-THAN-OR-EQUAL-TO 0.65)
CHIN, R
论文数:
0
引用数:
0
h-index:
0
CHIN, R
MILANO, RA
论文数:
0
引用数:
0
h-index:
0
MILANO, RA
LAW, HD
论文数:
0
引用数:
0
h-index:
0
LAW, HD
[J].
ELECTRONICS LETTERS,
1980,
16
(16)
: 626
-
627
[5]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[6]
RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(04)
: 395
-
&
[7]
EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES
FORREST, SR
论文数:
0
引用数:
0
h-index:
0
FORREST, SR
DIDOMENICO, M
论文数:
0
引用数:
0
h-index:
0
DIDOMENICO, M
SMITH, RG
论文数:
0
引用数:
0
h-index:
0
SMITH, RG
STOCKER, HJ
论文数:
0
引用数:
0
h-index:
0
STOCKER, HJ
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 580
-
582
[8]
IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING
FORREST, SR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
FORREST, SR
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
POLLACK, MA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(03)
: 322
-
325
[9]
SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
论文数:
0
引用数:
0
h-index:
0
KAJIYAMA, K
MIZUSHIMA, Y
论文数:
0
引用数:
0
h-index:
0
MIZUSHIMA, Y
SAKATA, S
论文数:
0
引用数:
0
h-index:
0
SAKATA, S
[J].
APPLIED PHYSICS LETTERS,
1973,
23
(08)
: 458
-
459
[10]
III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES
LAW, HD
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center
LAW, HD
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center
NAKANO, K
TOMASETTA, LR
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center
TOMASETTA, LR
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(07)
: 549
-
558
←
1
2
→