ELECTRONIC STATES AND BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON

被引：89
作者：
CHING, WY
LAM, DJ
LIN, CC
机构：
[1] ARGONNE NATL LAB,ARGONNE,IL 60439
[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源：
PHYSICAL REVIEW B | 1980年 / 21卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.21.2378
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2378 / 2387
页数：10
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