ELECTRONIC STATES AND BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON

被引：89
作者：
CHING, WY
LAM, DJ
LIN, CC
机构：
[1] ARGONNE NATL LAB,ARGONNE,IL 60439
[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源：
PHYSICAL REVIEW B | 1980年 / 21卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.21.2378
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2378 / 2387
页数：10
相关论文
共 41 条
[1]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[2]  
ANDERSON DA, 1977, 7TH P INT C AM LIQ S, P334
[3]   INFRARED-ABSORPTION IN HYDROGENATED AMORPHOUS AND CRYSTALLIZED GERMANIUM [J].
BERMEJO, D ;
CARDONA, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :421-430
[4]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[6]   ELECTRONIC-STRUCTURE OF F-CENTER IN A LITHIUM-FLUORIDE CRYSTAL BY METHOD OF LINEAR COMBINATIONS OF ATOMIC ORBITALS [J].
CHANEY, RC ;
LIN, CC .
PHYSICAL REVIEW B, 1976, 13 (02) :843-851
[7]   APPLICATION OF GAUSSIAN-TYPE ORBITALS FOR CALCULATING ENERGY BAND STRUCTURES OF SOLIDS BY METHOD OF TIGHT BINDING [J].
CHANEY, RC ;
TUNG, TK ;
LIN, CC ;
LAFON, EE .
JOURNAL OF CHEMICAL PHYSICS, 1970, 52 (01) :361-&
[8]   THEORETICAL STUDIES OF ELECTRONIC STATES PRODUCED BY HYDROGENATION OF AMORPHOUS SILICON [J].
CHING, WY ;
LAM, DJ ;
LIN, CC .
PHYSICAL REVIEW LETTERS, 1979, 42 (12) :805-808
[9]   ORTHOGONALIZED LINEAR COMBINATIONS OF ATOMIC ORBITALS .2. CALCULATION OF OPTICAL-PROPERTIES OF POLYMORPHS OF SILICON [J].
CHING, WY ;
LIN, CC .
PHYSICAL REVIEW B, 1977, 16 (06) :2989-2993
[10]   ELECTRONIC-ENERGY STRUCTURE OF AMORPHOUS SILICON [J].
CHING, WY ;
LIN, CC ;
HUBER, DL .
PHYSICAL REVIEW B, 1976, 14 (02) :620-631
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