INJECTION LOCKING IN DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS

被引：109
作者：
HUI, RQ
DOTTAVI, A
MECOZZI, A
SPANO, P
机构：
[1] Fondazione Ugo Bordoni, 00142, Rome
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期
关键词：
D O I：
10.1109/3.89994
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Injection locking properties of distributed feedback semiconductor lasers are studied systematically. Due to the high side mode suppression, these devices show different locking properties when compared to lasers having Fabry-Perot structures. The main result is the identification of four regimes for different injection levels. In particular, a symmetrical locking band at low optical injection level is confirmed. The presence of this symmetrical band can be exploited in some applications: as examples, the measurement of the linewidth enhancement factor alpha and the PSK modulation capability are reported.
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页码：1688 / 1695
页数：8
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