ELECTRON-PARAMAGNETIC RESONANCE OF HYDROGEN IN SILICON

被引：94
作者：
GORELINSKII, YV
NEVINNYI, NN
机构：
[1] Institute of High Energy Physics, Academy of Sciences of the Kazakh SSR
来源：
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(91)90119-Y
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 +/- 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 +/- 2.5) x 10(-7) cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
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页码：155 / 167
页数：13
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