LARGE-SCALE CLUSTERS OF ELECTRICALLY ACTIVE DEFECTS IN GALLIUM-ARSENIDE SINGLE-CRYSTALS

被引：0
|
作者：
YUREV, VA
KALINUSHKIN, VP
MURIN, DI
机构：
来源：
SEMICONDUCTORS | 1994年 / 28卷 / 04期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of flaw detection in single-crystal samples of gallium arsenide are reported. The method used was small-angle scattering of light in the mid-IR region (lambda = 10.6 mum). A model of large-scale impurity clusters in gallium arsenide is proposed. It is suggested that these clusters are regions saturated with microscopic inclusions of Ga and a Ga(As) antistructural defect.
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页码：384 / 386
页数：3
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