VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION

被引：17
作者：
SAKAKIBARA, Y
OGAWA, T
KOMATSU, K
MORIYA, S
KOBAYASHI, M
KOBAYASHI, T
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期
关键词：
D O I：
10.1109/T-ED.1981.20600
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1279 / 1284
页数：6
相关论文
共 16 条
  • [1] ARAI E, 1979, JPN J APPL PHYS, V18, P295
  • [2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [3] COGSWELL G, 1978, 8TH P INT C EL ION B, P117
  • [4] SOL-GEL BEHAVIOR AND IMAGE-FORMATION IN POLY(GLYCIDYL METHACRYLATE) AND ITS COPOLYMERS WITH ETHYL ACRYLATE
    FEIT, ED
    WURTZ, ME
    KAMMLOTT, GW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 944 - 947
  • [5] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
  • [6] HATZAKIS M, 1974, 6TH P INT C EL ION B, P542
  • [7] Hirata K., 1980, International Electron Devices Meeting. Technical Digest, P405
  • [8] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY
    IMAMURA, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630
  • [9] MONTE-CARLO SIMULATION OF SPATIALLY DISTRIBUTED BEAMS IN ELECTRON-BEAM LITHOGRAPHY
    KYSER, DF
    VISWANATHAN, NS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1305 - 1308
  • [10] A FAULT-TOLERANT 256K RAM FABRICATED WITH MOLYBDENUM-POLYSILICON TECHNOLOGY
    MANO, T
    TAKEYA, K
    WATANABE, T
    IEDA, N
    KIUCHI, K
    ARAI, E
    OGAWA, T
    HIRATA, K
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (05) : 865 - 872
12