NOISE MODELING IN SUBMICROMETER-GATE FETS

被引:31
作者
CARNEZ, B
CAPPY, A
FAUQUEMBERGUE, R
CONSTANT, E
SALMER, G
机构
关键词
D O I
10.1109/T-ED.1981.20431
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:784 / 789
页数:6
相关论文
共 16 条
[1]   COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J].
CAPPY, A ;
CARNEZ, B ;
FAUQUEMBERGUES, R ;
SALMER, G ;
CONSTANT, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2158-2160
[2]  
CARNEZ B, 1980, J APPL PHYS, V51
[3]  
FAUQUEMBERGUE R, 1980, J APPL PHYS, V51
[4]   OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].
FUKUI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037
[5]  
GRAFFEUIL J, 1977, THESIS U TOULOUSE TO
[6]   EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS [J].
HILL, G ;
ROBSON, PN ;
MAJERFELD, A ;
FAWCETT, W .
ELECTRONICS LETTERS, 1977, 13 (08) :235-236
[7]   FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS [J].
MALONEY, TJ ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :357-358
[8]   SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].
OHATA, K ;
ITOH, H ;
HASEGAWA, F ;
FUJIKI, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1029-1034
[9]  
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[10]   THEORY OF NOISY FOURPOLES [J].
ROTHE, H ;
DAHLKE, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (06) :811-818