SOME OPTICAL PROPERTIES OF CU IN GAP

被引：47

作者：

GRIMMEISS, HG ^{[1
]}

MONEMAR, B ^{[1
]}

机构：

[1] INST TECHNOL, DEPT SOLID STATE PHYS, LUND, SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 19卷 / 02期

关键词：

D O I：

10.1002/pssa.2210190214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：505 / 511

页数：7

共 14 条

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[2] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J].

BJORKLUND, G ;

GRIMMEISS, HG .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :589-+

[3] CAPTURE MODES REVEALED BY STUDY OF LINE INTENSITIES IN GAP PAIR SPECTRA [J].

DEAN, PJ ;

PATRICK, L .

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[4]

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[5]

Hagston W. E., 1971, Journal of Luminescence, V3, P253, DOI 10.1016/0022-2313(71)90063-9

[6]

HAGSTON WE, 1972, J LUMIN, V5, P285

[7] RESPONSE-TIME MEASUREMENTS OF EXCITON AND PAIR RADIATIVE RECOMBINATION ASSOCIATED WITH ZN-O ISOELECTRONIC COMPLEX IN GAP,4 TO 100 DEGREES K [J].

JAYSON, JS ;

BACHRACH, RZ .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :477-&

[8] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

[9]

Monemar B., 1972, Journal of Luminescence, V5, P472, DOI 10.1016/0022-2313(72)90010-5

[10]

QUEISSER HJ, 1971, FESTKORPERPROBLEME, V10, P45

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