Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT

被引：0

作者：

Das, Palash ^{[1
]}

Biswas, Dhrubes ^{[1
]}

机构：

[1] Indian Inst Technol, Kharagpur 721302, W Bengal, India

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 01期

关键词：

AlGaN; /; GaN; Modeling; Threshold voltage; Linearity;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted based on the calculated energy levels inside triangular quantum well at the hetero-interface and found to be comparable with experimental data. The conceptual explanation of device linearity in large signal applications has been presented in terms of quantized energy levels in the quantum well. The dependence of threshold voltage and linear operable gate voltage range on a newly introduced parameter named "Surface Factor" is analyzed as well.

引用

页数：3

共 11 条

[1] Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02) :888-894

[2] Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility [J].

Chu, Min ;

Koehler, Andrew D. ;

Gupta, Amit ;

Nishida, Toshikazu ;

Thompson, Scott E. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)

[3] Simplified 2DEG Carrier Concentration Model For Composite Barrier AlGaN/GaN HEMT [J].

Das, Palash ;

Biswas, Dhrubes .

SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B, 2014, 1591 :1449-1451

[4]

Javorka P., 2004, THESIS REC CTR JUELI

[5] Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures [J].

Kaun, Stephen W. ;

Burke, Peter G. ;

Wong, Man Hoi ;

Kyle, Erin C. H. ;

Mishra, Umesh K. ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2012, 101 (26)

[6] Highly linear A10.3Ga0.7N-A10.05Ga0.95N-GaN composite-channel HEMTs [J].

Liu, J ;

Zhou, YG ;

Chu, RM ;

Cai, Y ;

Chen, KJ ;

Lau, KM .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :145-147

[7] DC, RF, and, microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration [J].

Lu, W ;

Kumar, V ;

Piner, EL ;

Adesida, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :1069-1074

[8] An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer [J].

Shealy, JR ;

Kaper, V ;

Tilak, V ;

Prunty, T ;

Smart, JA ;

Green, B ;

Eastman, LF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3499-3509

[9] Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz [J].

Soltani, A. ;

Gerbedoen, J-C ;

Cordier, Y. ;

Ducatteau, D. ;

Rousseau, M. ;

Chmielowska, M. ;

Ramdani, M. ;

De Jaeger, J-C .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) :490-492

[10]

Streetman B., 2006, SOLID STATE ELECT DE

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