EFFECTS OF THE FERMI LEVEL ON DEFECTS IN BE+-IMPLANTED GAAS STUDIED BY A MONOENERGETIC POSITRON BEAM

被引：11
作者：
UEDONO, A
WEI, L
TABUKI, Y
KONDO, H
TANIGAWA, S
WADA, K
NAKANISHI, H
机构：
[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 12A期
关键词：
POSITRON ANNIHILATION; MONOENERGETIC POSITRON BEAM; DEFECT; ION IMPLANTATION; FERMI LEVEL EFFECT; GAAS;
D O I：
10.1143/JJAP.30.L2002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vacancy-type defects in 60-keV Be+-implanted GaAs(100) were studied by a monoenergetic positron beam. The depth distribution of vacancy-type defects in an n-type specimen (Si, 1 X 10(16) Si/cm3) was obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species was identified as a divacancy from the characteristic value of the line-shape parameter S. These defects, however, could not be observed in the p-type specimen (Zn, 3 x 10(18) Zn/cm3). This fact can be attributed to the recombination of vacancy-type defects and interstitial Ga atoms introduced by the Fermi level effect,
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页码：L2002 / L2005
页数：4
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