MODELING OF SPUTTERING AND REDEPOSITION IN FOCUSED-ION-BEAM TRENCH MILLING

被引:26
作者
ISHITANI, T [1 ]
OHNISHI, T [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 06期
关键词
D O I
10.1116/1.577177
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Modeling is performed for focused-ion-beam (FIB) sputtering and redeposition on trench sidewalls in a steady state approximation. Calculations are carried out to demonstrate the sputtered surface profile under known parameters such as sputtering yield as a function of ion incident angle, the FIB current density profile, and the FIB scan speed. It is found that a steplike slope with a gradient angle of theta-o is formed at the FIB bombarding position. Furthermore, the redeposition flux on the sidewalls is calculated as a function of theta-o for the FIB trench milling assuming the cosine law for the angular distribution of the sputtered atom. The redeposition will be more accurately predictable and controllable when more information about these assumptions is obtained.
引用
收藏
页码:3084 / 3089
页数:6
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