TEMPERATURE DEPENDENCE OF ELECTRIC STRENGTH FOR SILICON MONOOXIDE THIN FILMS

被引：0
作者：
MUKHACHEV, VA
MUKHACHEVA, NS
机构：
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1970年 / 11期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：155 / +
页数：1
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共 12 条
[1]  
BUDENSTEIN PP, 1967, J APPL PHYS, V38
[2]  
Frenkel Ya. I., 1971, ZH EKSP TEOR FIZ, V8, P1292
[3]  
GERSHINSKII AE, 1967, FTT, V9
[4]  
KHOLLEND L, 1963, NANESENIE TONKIKH PL, P263
[5]   EXTENDED TEMPERATURE RANGE FOR MAXIMUM DIELECTRIC STRENGTH [J].
KLEIN, N ;
LISAK, Z .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07) :979-+
[6]   MAXIMUM DIELECTRIC STRENGTH OF THIN SILICON OXIDE FILMS [J].
KLEIN, N ;
GAFNI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :281-+
[7]  
KOSTSOV EG, 1968, VYCHISLITELNYE SISTE
[8]  
SCHENKEL FW, 1964, P ELECTRON COMPONETS, P194
[9]   TRANSITION FROM ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION PROCESSES IN METAL-INSULATOR-METAL SYSTEMS [J].
SIMMONS, JG .
PHYSICAL REVIEW, 1968, 166 (03) :912-&
[10]   ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION IN SILICON OXIDE FILMS [J].
STUART, M .
PHYSICA STATUS SOLIDI, 1967, 23 (02) :595-&
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