EFFECT OF NATIVE OXIDE ON INTERFACE PROPERTY OF GAAS MIS STRUCTURES

被引:22
作者
SUZUKI, N
HARIU, T
SHIBATA, Y
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D O I
10.1063/1.90495
中图分类号
O59 [应用物理学];
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页码:761 / 762
页数:2
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APPLIED PHYSICS LETTERS, 1978, 32 (04) :252-253
[2]  
HARIU T, 1978, APPL PHYS LETT, V32, P4
[3]  
SAWADA T, 1976, ELECTRON LETT, V12, P472
[4]   ANODIC-OXIDATION OF GAAS USING OXYGEN PLASMA [J].
YAMASAKI, K ;
SUGANO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :321-326