PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION

被引：46
作者：
FOSSUM, JG
VEERARAGHAVAN, S
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期
关键词：
D O I：
10.1109/EDL.1986.26508
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：652 / 654
页数：3
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