IMPURITY-BAND HOPPING HALL-MOBILITY REVISITED

Incorporating the passive role of the phonon reservoir (dephasing) in the time development of the electron system via modification of the generalized stochastic Liouville equation method, a theory of the impurity-band hopping Hall mobility parallel to the approach of Holstein and Friedman is constructed. Owing to the dephasing, the mobility is found to consist of two contributions. The standard one reproduces the Holstein and Friedman results while the non-standard one is found to increase with decreasing temperature at very low T for a model with positive power-law density of site energies near the band edge.