RF POWER DEPENDENCE OF YBCO THICK FILMS

被引：7

作者：

Button, T. W. ^{[1
]}

Smith, P. A. ^{[2
]}

Wu, Z. ^{[2
]}

Alford, N. McN. ^{[1
]}

Davis, L. E. ^{[2
]}

Penn, S. J. ^{[1
]}

机构：

[1] ICI PLC, Runcorn WA7 4QE, Cheshire, England

[2] UMIST, Manchester M60 1QD, Lancs, England

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of Q with incident power has been measured for an all thick film YBa2Cu3Ox cavity resonating in the TE011 mode at 5.66GHz and 77K. The high unloaded Q of 715,000 measured at low incident power levels decreases as the power level is increased, but remains over 200,000 with 1.4W incident on the cavity which corresponds to 0.7W dissipated in the cavity. The data have been used to calculate the rf power dependence of the R-s of thick film YBa2Cu3Ox which is shown to be approximately linear for rf field levels between 0 and 0.5mT.

引用

页码：1450 / 1452

页数：3

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