SPUTTER SYNTHESIS OF TBCU7 TYPE SM(COFECUZR) FILMS WITH CONTROLLED EASY-AXIS ORIENTATION

Single phase TbCu7 type films of Sm(CoFeCuZr) have been sputter synthesized for a range of sputter gas pressure, deposition temperature, and two different gas species: Ar and Ar50%Xe. The magnetic and crystallographic properties of these films as a function of sputter deposition parameters have been studied. Films synthesized at temperatures near their crystallization temperatures at sputter gas pressures exceeding 60 mTorr of Ar50%Xe, had a strong c-axis in-plane texture. The remanent magnetization ratio for measurement perpendicular to the film plane versus in plane was close to zero for such films. X-ray diffraction patterns of these films showed only (hk0) type reflections. At gas pressures around 30 mTorr predominant reflection was (111) type. The perpendicular to the in-plane BR ratio for such films was around 0.55. For films with in-plane c-axis texture, in-plane Br of 9.0 kGauss and coercivities in the range 3-10 kOe were possible. Pressures of Ar and Ar50%Xe correlated roughly in the ratio 1:2 for the synthesis of films, with comparable crystallographic and magnetic properties.