Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method

被引：3

作者：

Lee, Sang-Hyun ^{[1
]}

Lee, Seung-Yup ^{[1
]}

Park, Byung-Ok ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Dept Inorgan Mat Engn, Daegu 702701, South Korea

来源：

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2012年 / 22卷 / 01期

关键词：

Sol-gel; Indium-zinc oxide; Electrical properties and measurements; Optical properties;

D O I：

10.6111/JKCGCT.2012.22.1.015

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [Zn(CH3COO)(2) center dot 2H(2)O] and indium acetate [In(CH3COO)(3)] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to 1000 degrees C, the thin film crystallizes into polycrystalline In2O3(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of 700 degrees C as 2 Omega center dot cm. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

引用

页码：15 / 18

页数：4

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