FAILURE OF MATTHIESSENS-RULE IN THE CALCULATION OF CARRIER MOBILITY AND ALLOY SCATTERING EFFECTS IN GA0.47IN0.53AS

被引：27

作者：

TAKEDA, Y ^{[1
]}

PEARSALL, TP ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 16期

关键词：

D O I：

10.1049/el:19810402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：573 / 574

页数：2

共 15 条

[1] ELECTRON DRIFT VELOCITY IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

NAVA, F ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284

[2] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[3] ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J].

HARRISON, JW ;

HAUSER, JR .

PHYSICAL REVIEW B, 1976, 13 (12) :5347-5350

[4] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].

LEHENY, RF ;

BALLMAN, AA ;

DEWINTER, JC ;

NAHORY, RE ;

POLLACK, MA .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :561-568

[5] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[6] DISORDER SCATTERING IN SOLID-SOLUTIONS OF III-V SEMICONDUCTING COMPOUNDS [J].

MAKOWSKI, L ;

GLICKSMAN, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :487-492

[7] ALLOY SCATTERING EFFECTS AND CALCULATED MOBILITY IN NORMAL-TYPE GA0.47IN0.53AS [J].

PEARSALL, TP .

ELECTRONICS LETTERS, 1981, 17 (04) :169-170

[8]

PEARSALL TP, 1981, ELECTRON HOLE MOBILI, P639

[9]

PEARSALL TP, 1979, CHARACTERIZATION GA0, P94

[10] DIELECTRIC DEFINITION OF ELECTRONEGATIVITY [J].

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1968, 20 (11) :550-&

← 1 2 →