X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS

被引：202

作者：

SEGMULLER, A ^{[1
]}

BLAKESLEE, AE ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA

来源：

关键词：

D O I：

10.1107/S0021889873007995

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：19 / 25

页数：7

共 12 条

[1] VAPOR GROWTH OF A SEMICONDUCTOR SUPERLATTICE [J].

BLAKESLE.AE .

[2]

BLAKESLEE AE, 1970, GALLIUM ARSENIDE R 9, P283

[3]

COLE H, 1970, 28 ANN PITTSB DIFFR

[4]

COURANT R, 1931, METHODEN MATHEMATISC, V1, P405

[5]

Dehlinger U, 1927, Z KRISTALLOGR, V65, P615

[6]

ESAKI L, 1971, 12TH P INT C LOW TEM, P551

[7]

FONTAINE DD, 1966, LOCAL ATOMIC ARRANGE, V36, P51

[8] LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J].

GARLAND, CW ;

PARK, KC .

[9] MODULATED STRUCTURES IN SOME COPPER NICKEL IRON ALLOYS [J].

HARGREAVES, ME .

[10]

MATTHEWS JW, 1972, MAY C VAP GROWTH EP