THERMALLY STABLE AND NONSPIKING PD/SB(MN) OHMIC CONTACT TO P-GAAS

被引：14

作者：

HAN, CC ^{[1
]}

WANG, XZ ^{[1
]}

LAU, SS ^{[1
]}

POTEMSKI, RM ^{[1
]}

TISCHLER, MA ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thermally stable, nonspiking ohmic contact to p-GaAs has been developed based on the solid-phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 angstrom)/Sb(100 angstrom)/Mn(10 angstrom)/Pd(250 angstrom)/p-GaAs. Thermal annealing of the contact between 300 and 600-degrees-C for 10 s yields contact resistivities in the range of low 10(-6) OMEGA-cm2 on substrates doped to 2.5 x 10(18) cm-3. A contact resistivity of 4.5 x 10(-7) OMEGA-cm2 can be obtained after annealing at 500-degrees-C on samples with a doping concentration of 4.5 x 10(19) cm-3. The contact metallization remains uniform in thickness and the contact interface is flat after the contact is formed. The consumption of the substrate is limited to less than a hundred angstroms. Contact resistivities are stable at 400-degrees-C.

引用

页码：1617 / 1619

页数：3

共 14 条

[1]

CHANG LL, 1982, IBM TECH B, V24, P4965

[2] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS ON P-TYPE GAAS USING GASB/GAAS STRAINED-LAYER SUPERLATTICES [J].