Electron mobility in CdxHg1-xSe

被引：0
作者：
Malyk, O. P. [1 ]
机构：
[1] Lviv Polytech Natl Univ, Semicond Elect Dept, 12 Bandera Str, UA-79013 Lvov, Ukraine
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2009年 / 12卷 / 03期
关键词：
cadmium-mercury-selenium solid solution; charge carrier scattering;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg1-xSe (0 <= x <= 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 - 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established.
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