MATERIAL PROPERTIES OF P-TYPE GAAS AT LARGE DOPINGS

被引：101

作者：

TIWARI, S ^{[1
]}

WRIGHT, SL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.102745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We summarize the room-temperature minority-carrier mobility, minority-carrier lifetime, and effective band-gap shrinkage for p-type GaAs at large dopings, as determined from measurements on heterostructure bipolar transistors and published literature. The minority-carrier mobilities are significantly smaller than the majority-carrier mobilities, the lifetime data show a change in dependence on doping at 1×1019 cm-3, and the effective band-gap shrinkage is ≊5% at 1×1019 cm-3. The fits to electrical parameters described here should be of interest in modeling of minority-carrier devices.

引用

页码：563 / 565

页数：3

共 31 条

[21] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598

[22] ELECTRON-MOBILITY IN P-TYPE GAAS [J].

NATHAN, MI ;

DUMKE, WP ;

WRENNER, K ;

TIWARI, S ;

WRIGHT, SL ;

JENKINS, KA .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :654-656

[23]

NELSON RJ, 1979, I PHYS C SER, V45, P256

[24] ABRUPT INTERFACE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - CARRIER HEATING AND JUNCTION CHARACTERISTICS [J].

RAMBERG, LP ;

ISHIBASHI, T .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :809-820

[25] ELECTRON TRANSPORT IN GAAS [J].

RODE, DL ;

KNIGHT, S .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2534-&

[26] A MONTE-CARLO STUDY OF ELECTRON-HOLE SCATTERING AND STEADY-STATE MINORITY-ELECTRON TRANSPORT IN GAAS [J].

SADRA, K ;

MAZIAR, CM ;

STREETMAN, BG ;

TANG, DS .

APPLIED PHYSICS LETTERS, 1988, 53 (22) :2205-2207

[27] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862

[28] MOCVD-GROWN ALGAAS GAAS HBTS WITH EPITAXIALLY EMBEDDED P+ LAYERS IN EXTRINSIC BASE [J].

TAIRA, K ;

KAWAI, H ;

KANEKO, K .

ELECTRONICS LETTERS, 1987, 23 (19) :989-990

[29] TIME-OF-FLIGHT MEASUREMENTS OF MINORITY-CARRIER TRANSPORT IN P-SILICON [J].

TANG, DD ;

FANG, FF ;

SCHEUERMANN, M ;

CHEN, TC .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1540-1541

[30] HETEROSTRUCTURE DEVICES USING SELF-ALIGNED P-TYPE DIFFUSED OHMIC CONTACTS [J].

TIWARI, S ;

GINZBERG, A ;

AKHTAR, S ;

WRIGHT, SL ;

MARKS, RF ;

KWARK, YH ;

KIEHL, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :422-424

← 1 2 3 4 →