SINGLE-CRYSTAL GROWTH BY MOCVD OF ZINC-BASED CHALCOGENIDES USING NEW GROUP-II ADDUCT SOURCES

被引:30
作者
COCKAYNE, B [1 ]
WRIGHT, PJ [1 ]
ARMSTRONG, AJ [1 ]
JONES, AC [1 ]
ORRELL, ED [1 ]
机构
[1] EPICHEM LTD,WIRRAL L62 3QF,MERSEYSIDE,ENGLAND
关键词
ADDUCT SOURCES - CHALCOGENIDES - HIGH QUALITY LAYERS - II-VI COMPOUNDS - METALORGANIC CHEMICAL VAPOR DEPOSITION - SINGLE CRYSTAL;
D O I
10.1016/0022-0248(88)90366-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:57 / 62
页数:6
相关论文
共 9 条
[1]  
COATES GE, 1967, ORGANOMETALLIC COMPO, V1, P132
[2]   THE GROWTH BY MOCVD USING NEW GROUP-VI SOURCES AND ASSESSMENT BY HRTEM AND CL OF ZN-BASED II-VI SINGLE-CRYSTAL LAYERS [J].
COCKAYNE, B ;
WRIGHT, PJ ;
SKOLNICK, MS ;
PITT, AD ;
WILLIAMS, JO ;
NG, TL .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :17-22
[3]   METALORGANIC CHEMICAL VAPOR-DEPOSITION OF WIDE BAND-GAP II-VI-COMPOUNDS [J].
COCKAYNE, B ;
WRIGHT, PJ .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :223-230
[4]  
MITSUHASHI H, 1985, JPN J APPL PHYS, V24, P1864
[5]   MOCVD GROWTH OF ZNSE FILMS USING DIETHYLSELENIDE [J].
SRITHARAN, S ;
JONES, KA .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :231-234
[6]   MOCVD LAYER GROWTH OF ZNSE USING A NEW ZINC SOURCE [J].
WRIGHT, PJ ;
COCKAYNE, B ;
WILLIAMS, AJ ;
JONES, AC ;
ORRELL, ED .
JOURNAL OF CRYSTAL GROWTH, 1987, 84 (03) :552-554
[7]   THE USE OF HETEROCYCLIC-COMPOUNDS IN THE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL ZNS, ZNSE AND ZNO [J].
WRIGHT, PJ ;
GRIFFITHS, RJM ;
COCKAYNE, B .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :26-34
[8]   THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J].
WRIGHT, PJ ;
COCKAYNE, B .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :148-154
[9]   ZNSE-ZNS STRAINED-LAYER SUPERLATTICE GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING METHYLALKYLS [J].
YOKOGAWA, T ;
OGURA, M ;
KAJIWARA, T .
APPLIED PHYSICS LETTERS, 1986, 49 (25) :1702-1704