PHOTOELASTIC AND X-RAY TOPOGRAPHIC STUDIES OF RESIDUAL-STRESS AND LATTICE DEFORMATION IN GAAS SINGLE-CRYSTALS

[1] ADAMKIEWICZ G, 1987, 16 INT SCH PHYSICS S, P158

[2] BAJOR A, 1985, PRACE ITME, V16

[3] BOOYENS H, 1985, J APPL PHYS, V51, P4375

[4] BOOYENS H, 1985, J APPL PHYSICS, V51, P4368

[5] Brauer K. H., 1973, Kristall und Technik, V8, P253, DOI 10.1002/crat.19730080126

[6] BROWN GT, 1983, I PHYS C SER, V67, P150

[7] BUBAKOVA R, 1968, CZECH J PHYS B, V12, P695

[8] CHABLI A, 1986, JUN P E MRS M STRASB, P27

[9] INTRINSIC PIEZOBIREFRINGENCE OF GE, SI, AND GAAS [J]. PHYSICAL REVIEW, 1969, 184 (03): : 821 - +

[10] ISHIKAWA J, 1985, JAP J APPL PHYSICS, V24, P968

[1] ADAMKIEWICZ G, 1987, 16 INT SCH PHYSICS S, P158

[2] BAJOR A, 1985, PRACE ITME, V16

[3] BOOYENS H, 1985, J APPL PHYS, V51, P4375

[4] BOOYENS H, 1985, J APPL PHYSICS, V51, P4368

[5] Brauer K. H., 1973, Kristall und Technik, V8, P253, DOI 10.1002/crat.19730080126

[6] BROWN GT, 1983, I PHYS C SER, V67, P150

[7] BUBAKOVA R, 1968, CZECH J PHYS B, V12, P695

[8] CHABLI A, 1986, JUN P E MRS M STRASB, P27

[9] INTRINSIC PIEZOBIREFRINGENCE OF GE, SI, AND GAAS [J]. PHYSICAL REVIEW, 1969, 184 (03): : 821 - +

[10] ISHIKAWA J, 1985, JAP J APPL PHYSICS, V24, P968