LOCALIZATION IN SEMICONDUCTOR QUANTUM-WIRE NANOSTRUCTURES

被引：22
|
作者：
LIU, DZ
DASSARMA, S
机构：
[1] Department of Physics, University of Maryland, College Park
来源：
PHYSICAL REVIEW B | 1995年 / 51卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.51.13821
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Localization properties of quasi-one-dimensional quantum-wire nanostructures are investigated using the transfer-matrix Lyapunov-exponent technique. We calculate the localization length as a function of the effective mean-field mobility assuming the random disorder potential to arise from dopant-induced short-range -function or finite-range Gaussian impurity scattering. The localization length increases approximately linearly with the effective mobility, and is also enhanced by finite-range disorder. There is a sharp reduction in the localization length when the chemical potential crosses into the second subband. © 1995 The American Physical Society.
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页码：13821 / 13823
页数：3
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