TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION

被引：7

作者：

DEPAS, M

VANMEIRHAEGHE, RL

LAFLERE, WH

CARDON, F

机构：

[1] Laboratorium voor kristallografie en studie van de vaste stof, Universiteit Gent, B-9000 Gent, Krijgslaan 281

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90130-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide layers with a thickness from 2 to 5nm were grown on (100) Si utilizing rapid thermal oxidation. RTO is shown to be a reliable method to obtain good quality SiO2 tunnel barriers. An analytical model is used to discuss the charge transport in Al/SiO2/n-Si tunnel diodes quantitatively. The influence of an in situ hydrogen anneal on the SiO2/Si interface is examined.

引用

页码：61 / 64

页数：4

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