RAMAN-STUDY OF ULTRATHIN FILMS OF HYDROGENATED AMORPHOUS-SILICON

被引：5
作者：
TANINO, H
GANGULY, G
MATSUDA, A
机构：
[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.46.15277
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have measured Raman spectra of ultrathin films of hydrogenated amorphous silicon having thicknesses down to 1.5 nm. The TO modes of the ultrathin films are slighty different from those of bulk amorphous silicon. The microscopic morphological changes during the initial stages of growth have been discussed.
引用
收藏
页码：15277 / 15279
页数：3
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