SUB-100-NM-SCALE PATTERNING USING A LOW-ENERGY ELECTRON-BEAM

被引：1

作者：

ISHII, K

MATSUDA, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 6A期

关键词：

ELECTRON BEAM LITHOGRAPHY; LOW-ENERGY BEAM; RETARDING FIELD; ZR/W; SCHOTTKY ELECTRON SOURCE; PMMA;

D O I：

10.1143/JJAP.31.L744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study explores the feasibility of nanometer-scale patterning using a low-energy electron beam. Improved resolution results from low-energy electron beam generation by a retarding field optical column with a Zr/W Schottky electron (SE) source. The beam is focused to 17 nm with a current of 100 pA at an energy of 2 kev. The 2-kev electron beam is used to expose a 50-nm-thick poly(methylmethacrylate) (PMMA) resist on a Si substrate. A 95-nm line-and-space pattern can be produced by carefully controlling the exposure dose.

引用

收藏

页码：L744 / L746

页数：3

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