BIAS-DEPENDENT STRUCTURE IN EXCESS NOISE IN GAAS SCHOTTKY TUNNEL JUNCTIONS

被引：8

作者：

CARRUTHERS, T

机构：

来源：

关键词：

D O I：

10.1063/1.1653469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：35 / +

页数：1

共 9 条

[1]

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[2]

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[4]

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PARKER, GH ;

MEAD, CA .

[6]

SAUTTER D, 1960, PROGR SEMICOND, V4, P126

[7]

TARATUTA AS, 1968, SOV PHYS SEMICOND+, V2, P239

[8] SHOT NOISE IN TUNNEL DIODE AMPLIFIERS [J].

TIEMANN, JJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08) :1418-1424

[9] EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS [J].

YAJIMA, T ;

ESAKI, L .