THERMAL RELAXATION OF PSEUDOMORPHIC SI-GE SUPERLATTICES BY ENHANCED DIFFUSION AND DISLOCATION MULTIPLICATION

被引：79

作者：

IYER, SS

LEGOUES, FK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4693 / 4698

页数：6

共 29 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2]

ALAWI K, 1983, J VAC SCI TECHNOL B, V1, P146

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[4]

BEAN JC, 1985, 1ST P INT S SI MBE, V85, P385

[5]

CAHN JW, 1968, T METALL SOC AIME, V242, P166

[6] SOLID-STATE REACTION AND STRUCTURE IN COMPOSITIONALLY MODULATED ZIRCONIUM-NICKEL AND TITANIUM-NICKEL FILMS [J].

CLEMENS, BM .

PHYSICAL REVIEW B, 1986, 33 (11) :7615-7624

[7] INVESTIGATIONS BY SIMS OF THE BULK IMPURITY DIFFUSION OF GE IN SI [J].

DORNER, P ;

GUST, W ;

PREDEL, B ;

ROLL, U ;

LODDING, A ;

ODELIUS, H .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (04) :557-571

[8] EXPERIMENTAL-EVIDENCE OF BOTH INTERSTITIAL-ASSISTED AND VACANCY-ASSISTED DIFFUSION OF GE IN SI [J].

FAHEY, P ;

IYER, SS ;

SCILLA, GJ .

APPLIED PHYSICS LETTERS, 1989, 54 (09) :843-845

[9] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].

FIORY, AT ;

BEAN, JC ;

HULL, R ;

NAKAHARA, S .

PHYSICAL REVIEW B, 1985, 31 (06) :4063-4065

[10]

GOUES FK, 1988, MATER RES SOC S P, V103, P165

← 1 2 3 →