USE OF SCANNING ELECTRON-MICROSCOPY IN THE STUDY OF A4B6 SEMICONDUCTORS

被引：0

作者：

BRESCHI, R

CAMANZI, A

FANO, V

机构：

来源：

EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY | 1988年 / 93卷

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D O I：

暂无

中图分类号：

Q81 [生物工程学（生物技术）]; Q93 [微生物学];

学科分类号：

071005 ; 0836 ; 090102 ; 100705 ;

摘要：

引用

页码：121 / 122

页数：2

共 50 条

[1] USE OF SCANNING ELECTRON-MICROSCOPY IN THE STUDY OF A4B6 SEMICONDUCTORS
BRESCHI, R
CAMANZI, A
FANO, V
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 121 - 122
[2] CATHODOLUMINESCENCE SCANNING ELECTRON-MICROSCOPY OF SEMICONDUCTORS
YACOBI, BG
HOLT, DB
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : R1 - R24
[3] APPLICATIONS OF SCANNING ELECTRON-MICROSCOPY TO SEMICONDUCTORS
BRESSE, JF
JOURNAL DE MICROSCOPIE, 1972, 13 (03): : 308 - +
[4] ELECTRON-STATES OF IMPLANTATION IMPURITY IN A4B6 SEMICONDUCTORS AND SEMIMETALS
PANKRATOV, OA
POVAROV, PP
FIZIKA TVERDOGO TELA, 1985, 27 (08): : 2325 - 2333
[5] ELECTRON-STRUCTURE OF POINT-DEFECTS IN A4B6 SEMICONDUCTORS
VOLKOV, BA
PANKRATOV, OA
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1985, 88 (01): : 280 - 293
[6] SCANNING ELECTRON-MICROSCOPY OF ELECTRICAL INHOMOGENEITIES IN SEMICONDUCTORS
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[7] TEMPERATURE-DEPENDENCE OF ELECTRON DIELECTRIC PERMEABILITY OF A4B6 SEMICONDUCTORS
VOLKOV, BA
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FIZIKA TVERDOGO TELA, 1982, 24 (11): : 3293 - 3297
[8] THEORY OF ELECTRON-ENERGY SPECTRUM OF GROUP A4B6 SEMICONDUCTORS
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PANKRATOV, OA
SAZONOV, AV
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1983, 85 (04): : 1395 - 1408
[9] SPIN SPLITTING IN A4B6 SEMIMAGNETIC SEMICONDUCTORS
ZASAVITSKII, II
SAZONOV, AV
FIZIKA TVERDOGO TELA, 1988, 30 (06): : 1669 - 1674
[10] MANY-ELECTRON EFFECTS AND VACANCY CHARGE STATES IN A4B6 SEMICONDUCTORS
PANKRATOV, OA
POVAROV, PP
FIZIKA TVERDOGO TELA, 1988, 30 (03): : 880 - 882

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