PROBLEMS AND PROSPECTS OF INSTRUMENTAL SURFACE-ANALYSIS OF ELECTRONIC MATERIALS AND PROCESSES

[31] AES INVESTIGATION OF THE CHEMICAL-STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 625 - 629

[32] DEPTH PROFILING OF SODIUM IN SIO2-FILMS BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 193 - 196

[33] McGuire G. E., 1981, Electron spectroscopy: Theory, techniques and applications. Vol.4, P1

[34] MCGUIRE GE, 1979, SCANNING ELECTRON MI, V1, P173

[35] Mchugh J.A., 1975, METHODS SURF ANAL, P223, DOI [10.1016/B978-0-444-41344-4.50013-6., DOI 10.1016/B978-0-444-41344-4.50013-6]

[36] QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1370 - 1374

[37] MORABITO JM, 1975, METHODS SURFACE ANAL, P279

[38] PLASMA-ETCHING CHARACTERISTICS OF CHROMIUM FILM AND ITS NOVEL ETCHING MODE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1351 - 1357

[39] OLDHAM WG, 1977, SCI AM, V237, P111, DOI 10.1038/scientificamerican0977-110

[40] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 313 - 325

[31] AES INVESTIGATION OF THE CHEMICAL-STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 625 - 629

[32] DEPTH PROFILING OF SODIUM IN SIO2-FILMS BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 193 - 196

[33] McGuire G. E., 1981, Electron spectroscopy: Theory, techniques and applications. Vol.4, P1

[34] MCGUIRE GE, 1979, SCANNING ELECTRON MI, V1, P173

[35] Mchugh J.A., 1975, METHODS SURF ANAL, P223, DOI [10.1016/B978-0-444-41344-4.50013-6., DOI 10.1016/B978-0-444-41344-4.50013-6]

[36] QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1370 - 1374

[37] MORABITO JM, 1975, METHODS SURFACE ANAL, P279

[38] PLASMA-ETCHING CHARACTERISTICS OF CHROMIUM FILM AND ITS NOVEL ETCHING MODE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1351 - 1357

[39] OLDHAM WG, 1977, SCI AM, V237, P111, DOI 10.1038/scientificamerican0977-110

[40] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 313 - 325