PROBLEMS AND PROSPECTS OF INSTRUMENTAL SURFACE-ANALYSIS OF ELECTRONIC MATERIALS AND PROCESSES

[21] KAPOOR VJ, 1981, J VAC SCI TECHNOL, V18, P305, DOI 10.1116/1.570747

[22] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 319 - 321

[23] ANODIC-OXIDATION OF GAAS IN AN OXYGEN PLASMA GENERATED BY A DC ELECTRICAL-DISCHARGE [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 39 - 49

[24] CHARACTERISTICS OF THERMAL OXIDES GROWN ON GAAS1-XPX [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 129 - 142

[25] ION-IMPLANTED STANDARDS FOR SECONDARY ION MASS-SPECTROMETRIC DETERMINATION OF THE 1A-7A GROUP ELEMENTS IN SEMICONDUCTING MATRICES [J]. ANALYTICAL CHEMISTRY, 1980, 52 (03) : 514 - 519

[26] LIAU ZL, 1978, NUCL INSTRUM METHODS, V149, P623, DOI 10.1016/0029-554X(78)90940-0

[27] ION-IMPLANTED SELENIUM PROFILES IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 15 - 17

[28] LIU SG, 1980, RCA REV, V41, P227

[29] LOWRY RK, 1980, SOLID STATE TECHNOL, V23, P71

[30] Luscher P. E., 1980, Molecular beam epitaxy, P15

[21] KAPOOR VJ, 1981, J VAC SCI TECHNOL, V18, P305, DOI 10.1116/1.570747

[22] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 319 - 321

[23] ANODIC-OXIDATION OF GAAS IN AN OXYGEN PLASMA GENERATED BY A DC ELECTRICAL-DISCHARGE [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 39 - 49

[24] CHARACTERISTICS OF THERMAL OXIDES GROWN ON GAAS1-XPX [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 129 - 142

[25] ION-IMPLANTED STANDARDS FOR SECONDARY ION MASS-SPECTROMETRIC DETERMINATION OF THE 1A-7A GROUP ELEMENTS IN SEMICONDUCTING MATRICES [J]. ANALYTICAL CHEMISTRY, 1980, 52 (03) : 514 - 519

[26] LIAU ZL, 1978, NUCL INSTRUM METHODS, V149, P623, DOI 10.1016/0029-554X(78)90940-0

[27] ION-IMPLANTED SELENIUM PROFILES IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 15 - 17

[28] LIU SG, 1980, RCA REV, V41, P227

[29] LOWRY RK, 1980, SOLID STATE TECHNOL, V23, P71

[30] Luscher P. E., 1980, Molecular beam epitaxy, P15