PROBLEMS AND PROSPECTS OF INSTRUMENTAL SURFACE-ANALYSIS OF ELECTRONIC MATERIALS AND PROCESSES

被引：0

作者：

RYAN, MA

MCGUIRE, GE

机构：

来源：

ACS SYMPOSIUM SERIES | 1982年 / 199卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：229 / 249

页数：21

共 54 条

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[8] USE OF NUCLEAR-REACTIONS AND SIMS FOR QUANTITATIVE DEPTH PROFILING OF HYDROGEN IN AMORPHOUS SILICON
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[10] COPPER DISTRIBUTION IN SPUTTERED AL-CU FILMS
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