GAS SENSORS FOR HIGH-TEMPERATURE OPERATION BASED ON METAL-OXIDE-SILICON CARBIDE (MOSIC) DEVICES

被引:103
作者
ARBAB, A
SPETZ, A
LUNDSTROM, I
机构
[1] Laboratory of Applied Physics, University of Linköping
关键词
D O I
10.1016/0925-4005(93)85022-3
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800-degrees-C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS capacitor. The MOSiC devices with a platinum gate respond to saturated hydrocarbons in air at concentrations well below the explosion limits.
引用
收藏
页码:19 / 23
页数:5
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