GROWTH OF (AL,GA)AS STRUCTURES ON (110)-GAAS BY MBE

The growth of (Al,Ga)As structures on both (110)-GaAs and the (110)-GaAs surface exposed by in-situ cleaving of a (100)-GaAs substrate has been investigated. ''T-junctions'' of GaAs layers have been grown in two growth steps where there is no discernible interface (as observed by high resolution SEM) between the two layers. High intensity photoluminescence has been observed from quantum wells grown on (110)-GaAs wafers at 480-degrees-C. The efficiency of p-type doping by beryllium has been measured by the Hall effect. No differences between the doping levels and mobilities at both ambient temperature and 77 K have been measured for (110) and (100) surfaces.