SEMIEMPIRICAL CALCULATION OF DEEP LEVELS - DIVACANCY IN SI

被引:40
作者
LEE, TF [1 ]
MCGILL, TC [1 ]
机构
[1] CALTECH,DEPT APPL PHYS,PASADENA,CA 91109
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 23期
关键词
D O I
10.1088/0022-3719/6/23/017
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:3438 / 3450
页数:13
相关论文
共 30 条
[1]   NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].
BENNEMAN, KH .
PHYSICAL REVIEW, 1965, 137 (5A) :1497-+
[2]  
CALLAWAY J, 1967, PHYS REV, V164, P1043, DOI 10.1103/PhysRev.164.1043
[3]   THEORY OF SCATTERING IN SOLIDS [J].
CALLAWAY, J .
JOURNAL OF MATHEMATICAL PHYSICS, 1964, 5 (06) :783-&
[4]  
CHEM CS, 1972, PHYS REV B, V5, P1505
[5]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[6]   3.9MU PHOTOCONDUCTIVITY BAND IN NEUTRON-IRRADIATED P-TYPE SILICON [J].
CHENG, LJ .
PHYSICS LETTERS A, 1967, A 24 (13) :729-&
[7]  
CHENG LJ, 1968, RADIATION EFFECTS SE
[8]   AB INITIO COMPUTATIONS IN ATOMS AND MOLECULES [J].
CLEMENTI, E .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (01) :2-&
[9]   ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON [J].
CORELLI, JC ;
OEHLER, G ;
BECKER, JF ;
EISENTRA.KJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1787-&
[10]   ISOLATED SINGLE VACANCY IN DIAMOND .1. ELECTRONIC STRUCTURE [J].
COULSON, CA ;
LARKINS, FP .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2245-&