OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON

被引：32
作者：
CHEN, MC
HILE, JW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 02期
关键词：
D O I：
10.1149/1.2404165
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：223 / +
页数：1
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