MONOLITHICALLY INTEGRATED ALGAAS/INGAAS LASER DIODE, P-N PHOTODETECTOR AND GAAS-MESFET GROWN ON SI SUBSTRATE

被引：10

作者：

EGAWA, T

JIMBO, T

UMENO, M

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya, Gokiso-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

OEICS ON SI; LASER DIODE; PHOTODETECTOR; MESFETS; RELIABILITY; STRESS RELIEF; INGAAS ACTIVE LAYER; INGAAS INTERMEDIATE LAYER; DARK-LINE DEFECTS;

D O I：

10.1143/JJAP.32.650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the first successful fabrication of the monolithically integrated AlGaAs/InGaAs laser diode, p-n photodetector and GaAs metal semiconductor field-effect transistor (MESFET) grown on a SiO2 back-coated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The reliability of the laser diode on the Si substrate can be improved by utilization of the strain-relieved AlGaAs/InGaAs laser diode with the InGaAs intermediate layer. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by the diffusion of As atoms. The use Of SiO2 back-coated Si substrate is effective in suppressing unintentional Si autodoping and in obtaining a good pinch-off GaAs MESFET.

引用

页码：650 / 653

页数：4

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