THEORY AND EXPERIMENTS ON SHOT NOISE IN SEMICONDUCTOR JUNCTION DIODES AND TRANSISTORS

被引:47
作者
GUGGENBUEHL, W
STRUTT, MJO
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1957年 / 45卷 / 06期
关键词
D O I
10.1109/JRPROC.1957.278483
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:839 / 854
页数:16
相关论文
共 32 条
[1]  
BARGELLINI PM, 1955, P IRE, V53, P217
[2]   EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS [J].
EARLY, JM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1401-1406
[3]  
ENGLUND JW, 1956, TRANSISTORS, V1, P309
[4]  
FONGER W, 1956, TRANSISTORS, V1, P239
[5]  
GIACOLETTO LJ, 1956, TRANSISTORS, V1, P296
[6]  
GUGGENBUEHL W, 1956, NACHRICHTENTECHNISCH, V5, P34
[7]  
GUGGENBUEHL W, 1955, THESIS SWISS FEDERAL
[8]  
GUGGENBUEHL W, 1955, AEU-ARCH ELEKTRON UB, V9, P259
[9]  
Guggenbuhl W., 1956, AEU-ARCH ELEKTRON UB, V10, P483
[10]  
GUGGENBUHL W, 1956, NACHRICHTENTECH FACH, V5, P30