EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2

被引：45

作者：

GDULA, RA

机构：

[1] IBM Corporation, East Fishkill Facility, NY 12533, Hopewell Junction

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper briefly reviews the general interaction of radiation with thermally grown SiO2 both phenomenologically and atomistically. Radiation-induced trapped charge, the creation of fast surface states, and the all-important neutral electron traps are discussed. The types of radiation and their concomitant damage produced by the typical processes of ion implantation, reactive ion etching, and electron-beam lithography are outlined. The effect of these processes on the oxidized silicon system is treated, and process modification to minimize radiation damage is discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

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收藏

页码：644 / 647

页数：4

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