SPIN DEPENDENT RECOMBINATION - A SI-29 HYPERFINE STUDY OF RADIATION-INDUCED PB CENTERS AT THE SI/SIO2 INTERFACE

被引：26
|
作者：
JUPINA, MA
LENAHAN, PM
机构：
[1] Pennsylvania State Univ,, Philadelphia, PA, USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期
关键词：
Semiconducting Silicon--Defects - Semiconductor Devices--Semiconductor Insulator Boundaries - Spectroscopic Analysis;
D O I：
10.1109/23.101174
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spin dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. Our SDR results show that the 29Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage. © 1990 IEEE
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收藏
页码：1650 / 1657
页数：8
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