GEM/SIN STRAINED-LAYER SUPERLATTICES FABRICATED BY PHASE-LOCKED EPITAXY

被引：25

作者：

MIKI, K

SAKAMOTO, K

SAKAMOTO, T

OKUMURA, H

TAKAHASHI, N

YOSHIDA, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90438-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：444 / 446

页数：3

共 6 条

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[3]

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[5] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GEXSI1-X MBE GROWTH ON SI(001) SUBSTRATES [J].

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SAKAMOTO, T ;

NAGAO, S ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05) :666-670

[6] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING [J].

SAKAMOTO, T ;

HASHIGUCHI, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L78-L80

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