INTERACTIONS BETWEEN ARSENIC AND BORON IMPLANTED IN SILICON DURING ANNEALING

被引：11

作者：

YOKOTA, K

OCHI, M

HIRAO, T

HORINO, Y

SATHO, M

ANDO, Y

MATSUDA, K

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN

[2] GOVT IND RES INST,IKEDA,OSAKA 563,JAPAN

[3] NISSHIN ELECT CO LTD,UKYO KU,KYOTO 615,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.348610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic ions (As+) and Boron ions (B+) were implanted into silicon (Si) at energies such that their respective projected ranges differ. In the implanted Si, the overlapping population of implanted As and B atoms occurred in the region in Si almost midway between their projected ranges near the surfaces after annealing. The only region in Si with As atoms concentrations more than three times as large as the B atom concentration became n type.

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页码：2975 / 2980

页数：6

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