CLUSTER FORMATION OF LI ON THE SI(111)7X7 SURFACE

被引：44
|
作者：
HASEGAWA, Y
KAMIYA, I
HASHIZUME, T
SAKURAI, T
TOCHIHARA, H
KUBOTA, M
MURATA, Y
机构：
[1] STM Group, The Institute for Solid State Physics, The University of Tokyo, Roppongi
[2] The Institute for Solid State Physics, The University of Tokyo, Roppongi
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.577074
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using a field ion-scanning tunneling microscope (FI-STM), the adsorption process of Li on the Si(111) 7 X 7 surface has been studied. At the initial stage, trimers are formed preferentially in the faulted half of the 7 X 7 unit cell. At higher coverages, these trimers coalesce to form six-atom and nine-atom clusters across the interface between the faulted and unfaulted halves. It is suggested, based on the careful study of the adsorption sites, that the Si adatoms of the dimer-adatom-stacking fault (DAS) model may be removed upon the Li adsorption. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码：238 / 240
页数：3
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