2-PHOTON INTERBAND TRANSITIONS AT CRITICAL POINTS IN SEMICONDUCTORS

被引：37

作者：

HASSAN, AR

机构：

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1970年 / 70卷 / 01期

关键词：

D O I：

10.1007/BF02712491

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：21 / &

共 50 条

[41] AMPLITUDES OF 2-PHOTON TRANSITIONS IN HYDROGEN
MIKHAILOV, AI
MOSKALEV, AN
FROLOV, GV
OPTIKA I SPEKTROSKOPIYA, 1983, 54 (04): : 599 - 604
[42] MASTER EQUATION FOR 2-PHOTON TRANSITIONS
CHEN, ZD
FREEDHOFF, H
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1991, 24 (15) : 3373 - 3385
[43] THEORY OF THE DRAG EFFECT DUE TO PHOTON MOMENTUM IN 2-PHOTON INTERBAND OPTICAL-TRANSITIONS INVOLVING DEEP IMPURITY CENTERS
IMAMOV, EZ
KREVCHIK, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 700 - 701
[44] EXCITONIC MOLECULE IN SEMICONDUCTORS BY 2-PHOTON ABSORPTION
ARYA, K
HASSAN, AR
SOLID STATE COMMUNICATIONS, 1977, 21 (03) : 301 - 303
[45] 2-PHOTON PHOTOCONDUCTIVITY PHENOMENA IN SEMICONDUCTORS AND INSULATORS
KOREN, G
PHYSICAL REVIEW B, 1975, 11 (02): : 802 - 821
[46] 2-PHOTON OPTICAL EDGE ABSORPTION IN SEMICONDUCTORS
KATANA, PK
PRODAN, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 315 - 319
[47] 2-PHOTON SPECTROSCOPY OF SHALLOW CENTERS IN SEMICONDUCTORS
BASSANI, F
QUATTROPANI, A
SOLID STATE COMMUNICATIONS, 1985, 53 (12) : 1077 - 1081
[48] ONE-PHOTON AND 2-PHOTON ACCEPTOR SPECTRA IN SEMICONDUCTORS
BINGGELI, N
BALDERESCHI, A
QUATTROPANI, A
SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 521 - 526
[49] MAGNETIC EXCITONS BY 2-PHOTON ABSORPTION IN SEMICONDUCTORS
HASSAN, AR
LETTERE AL NUOVO CIMENTO, 1976, 16 (04): : 109 - 112
[50] 2-PHOTON ABSORPTION IN SEMICONDUCTORS IN A MAGNETIC FIELD
GIRLANDA, R
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1971, B 6 (01): : 53 - &

← 1 2 3 4 5 →