2-PHOTON INTERBAND TRANSITIONS AT CRITICAL POINTS IN SEMICONDUCTORS

被引：37

作者：

HASSAN, AR

机构：

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1970年 / 70卷 / 01期

关键词：

D O I：

10.1007/BF02712491

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：21 / &

共 31 条

[1]

BASOV NG, 1965, JETP LETT-USSR, V1, P118

[2]

BASOV NG, 1965, PISMA ESKP TEOR FIZ, V1, P29

[3]

Bassani F., 1970, Optics Communications, V1, P371, DOI 10.1016/0030-4018(70)90072-6

[4]

BASSANI F, 1966, RENDICONTI SIF, P33

[5]

Bassani F., 1967, NUOVO CIMENTO B, V10, P95, DOI DOI 10.1007/BF02710685

[6]

Bloembergen N., 1965, NONLINEAR OPTICS

[7] OPTICAL DOUBLE-PHOTON ABSORPTION IN CDS [J].

BRAUNSTEIN, R ;

OCKMAN, N .

PHYSICAL REVIEW, 1964, 134 (2A) :A499-+

[8] NONLINEAR OPTICAL EFFECTS [J].

BRAUNSTEIN, R .

PHYSICAL REVIEW, 1962, 125 (02) :475-&

[9] VALENCE BAND STRUCTURE OF III-V COMPOUNDS [J].

BRAUNSTEIN, R ;

KANE, EO .

[10]

CARDONA M, 1967, SEMICONDUCTORS SEMIM, V3