ANNEALING OF N-TYPE GERMANIUM IRRADIATED WITH 500 KEV ELECTRONS AT 6 K

被引：9
作者：
FUKUOKA, N
SAITO, H
TSUCHIDA, T
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 1-2期
关键词：
D O I：
10.1080/00337577808233166
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：23 / 27
页数：5
相关论文
共 50 条
[31]   ENERGY LEVELS IN ELECTRON IRRADIATED N-TYPE GERMANIUM. [J].
Mooney, P.M. ;
Cherki, M. ;
Bourgoin, J.C. .
1979, 40 (02) :l19-l22
[32]   ANNEALING OF IRRADIATION DEFECTS IN LIGHTLY DOPED N-TYPE GERMANIUM [J].
MEESE, JM ;
MACKAY, JW .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06) :848-&
[33]   ANNEALING OF ELECTRON-INDUCED DEFECTS IN N-TYPE GERMANIUM [J].
MOONEY, PM ;
POULIN, F ;
BOURGOIN, JC .
PHYSICAL REVIEW B, 1983, 28 (06) :3372-3377
[34]   ANNEALING STUDY IN ELECTRON-IRRADIATED N-TYPE SILICON [J].
TAUKE, RV ;
FARADAY, BJ .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :5009-&
[35]   ISOTHERMAL ANNEALING OF ELECTRON-IRRADIATED N-TYPE SI [J].
DEANGELI.HM ;
CARNES, CP ;
DREVINSK.PJ ;
PENCZER, RE .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (04) :710-&
[36]   ANNEALING OF N-TYPE SI IRRADIATED WITH LARGE NEUTRON DOSES [J].
AKULOVICH, NI ;
LAPPO, MT ;
PETROV, VV ;
TKACHEV, VD .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01) :109-110
[37]   ANISOTROPY OF CONDUCTIVITY IN RANTE OF WARM ELECTRONS FOR HIGH-DOPED N-TYPE GERMANIUM AND N-TYPE SILICON [J].
TSCHULENA, GR .
ACTA PHYSICA AUSTRIACA, 1971, 33 (01) :42-+
[38]   HOT ELECTRONS AND NEGATIVE RESISTANCE AT 20 DEGREES K IN N-TYPE GERMANIUM CONTAINING AU= CENTRES [J].
RIDLEY, BK ;
PRATT, RG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) :21-&
[39]   RECOVERY SPECTRA OF N-TYPE GERMANIUM BOMBARDED WITH ELECTRONS OF 1.5MEV AT 77K [J].
HIRATA, M ;
FUKUMOTO, M ;
MIYAMOTO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) :1165-1166
[40]   ENERGY RELAXATION AND INTERVALLEY RELAXATION OF HOT ELECTRONS IN N-TYPE GERMANIUM [J].
SEEGER, K ;
SCHWEITZ.D .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 :415-&
12345